PHW20N50E |
RFQ for PHW20N50E |
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| Product | Manufacturers | Pack | D/C |
| PHW20N50E | - | T0-247 | 08+ |
N-channel, enhancement mode field-effect power transistor,intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
The PHW20N50E is supplied in the SOT429 (TO247) conventional leaded package.
Typical Application |
Features |
| These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. | • Repetitive Avalanche Rated• Fast switching • Stable off-state characteristics• High thermal cycling performance • Low thermal resistance |
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | Drain-source voltage | Tj = 25 to 150 | - | 500 | V |
| VDGR | Drain-gate voltage | Tj = 25 to 150 ; RGS = 20 kW | - | 500 | V |
| VGS | Gate-source voltage | - | ± 30 | V | |
| ID | Continuous drain current |
Tmb = 25 ; VGS = 10 V Tmb = 100 ; VGS = 10 V |
- | 20 12.4 | A |
| IDM | Pulsed drain current | Tmb = 25 | - | 80 | A |
| PD | Total dissipation | Tmb = 25 | - | 250 | w |
| Tstg, Tj | Operating junction and storage temperature range | -55 | 150 |
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